Non-Chemically Amplified EUV Resist Based on PHS

Calibration of Chemically Amplified Resist Models

Report on EUV resist and process limitations

EUV lithography (λ=13.4nm) has been identified as one of the technologies likely to succeed to 193nm lithography for the definition of ever-smaller transistor architectures. Whether EUV in the end will outrank competing technologies for the 32nm and 22nm nodes (Hyper NA immersion, maskless, nanoimprint) and whether EUV will make it to mass production of integrated circuits will depend on both E...

Patterning highly ordered arrays of complex nanofeatures through EUV directed polarity switching of non chemically amplified photoresist

Given the importance of complex nanofeatures in the filed of micro-/nanoelectronics particularly in the area of high-density magnetic recording, photonic crystals, information storage, micro-lens arrays, tissue engineering and catalysis, the present work demonstrates the development of new methodology for patterning complex nanofeatures using a recently developed non-chemically amplified photor...

Determining Free Volume Changes During the PEB and PAB of a Chemically Amplified Resist

Chemically amplified resists provide some trade-off between resolution and amplification. While it is necessary for a single photogenerated acid to be mobile enough to cause several deprotection reactions, this inevitably leads to some linewidth spread. An acid molecule mobile enough to travel to several reaction sites is also mobile enough to move into unexposed regions of the resist. In order...

Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography

Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography The aqueous base development step is one of the most critical processes in modern lithographic imaging technology. Sinusoidal modulation of the exposing light intensity must be converted to a step function in the resist film during the development process. Thus, in designing high-performance resi...